FDZ371PZ
Advanced specified power MOSFET for precise control and minimal standby power consumpti
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部品番号 : FDZ371PZ
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パッケージ/ケース : WLCSP-4
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDZ371PZ データシート (PDF)
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Series : FDZ371PZ
概要 FDZ371PZ
Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
主な特長
- Ultra-compact design, less space needed
- High-speed switching capability guaranteed
- Reliable performance under heavy load
- Compact size for PCB-friendly integration
- Robust against electrostatic discharges
- Easy to mount, low profile height
応用
- Industrial Use
- Consumer Electronics
- Automotive Sector
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDZ371PZ | Product Status | Obsolete |
FET Type | P-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | Rds On (Max) @ Id, Vgs | 75mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
Vgs (Max) | ±8V | Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
Power Dissipation (Max) | 1.7W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 4-WLCSP (1x1) |
Package / Case | WLCSP-4 | Base Product Number | FDZ371 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 3.7 A |
Rds On - Drain-Source Resistance | 100 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 17 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.7 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 88 ns |
Forward Transconductance - Min | 14 S | Height | 0.24 mm |
Length | 1 mm | Product | MOSFET Small Signal |
Product Type | MOSFET | Rise Time | 9.1 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Type | Power Trench MOSFET |
Typical Turn-Off Delay Time | 124 ns | Typical Turn-On Delay Time | 5.9 ns |
Width | 1 mm | Unit Weight | 0.002413 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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