FDZ661PZ
Trans MOSFET P-CH 20V 2.6A 4-Pin WLCSP T/R
在庫：7,763
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FDZ661PZ
-
パッケージ/ケース : WLCSP-4
-
Brand : Fairchild Semiconductor
-
Components Classification : Single FETs, MOSFETs
-
日付シート : FDZ661PZ データシート (PDF)
-
Series : FDZ661PZ
概要 FDZ661PZ
The FDZ661PZ is a cutting-edge product designed on an advanced 1.5 V PowerTrench® process, incorporating state-of-the-art "fine pitch" Thin WLCSP packaging technology. This innovative design allows for minimized PCB space and reduced rDS(on), setting a new standard for performance and efficiency in MOSFET technology
主な特長
- Advanced noise reduction
- Fully compatible devices
- Rapid deployment
- Economical cost-effectiveness
- Prioritized customer support
応用
- Portable Devices
- Power Management
- Charging Solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | FDZ661PZ | Product Status | Active |
| FET Type | P-Channel | Technology | Si |
| Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | Rds On (Max) @ Id, Vgs | 140mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Vgs (Max) | ±8V | Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 10 V |
| Power Dissipation (Max) | 1.3W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | 4-WLCSP (0.8x0.8) |
| Package / Case | WLCSP-4 | Manufacturer | onsemi |
| Product Category | MOSFET | RoHS | Details |
| Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2.6 A | Rds On - Drain-Source Resistance | 140 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 8.8 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.3 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Brand | onsemi / Fairchild | Configuration | Single |
| Product Type | MOSFET | Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs | Unit Weight | 0.002363 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FDC6506P
type 30V 1.8A 6-pin package tape and reel
FDMA3023PZ
High-performance Transistor Array
FDMS7692
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R
FDMS86101
Power MOSFET with N-channel configuration, designed for operation at 100V voltage, capable of carrying currents up to 12
FDMS8660AS
Trans MOSFET N-CH Si 30V 28A T/R
FDS2734
Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R
FDS8858CZ
Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC T/R
FDS9934C
The N-channel MOSFET features a higher current rating compared to the P-channel, providing flexibility for different circuit designs
FDC3601N
Small form factor N-channel MOSFET Transistor with a 1A current rating and 100V voltage rating
FDS86140
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC T/R
2N3507
2N3507 Product Overview: Power Bipolar Transistor - BJT
BSP317PH6327XTSA1
Negative polarity semiconductor component
AUIRGPS4067D1
The AUIRGPS4067D1 offers robust N-channel IGBT functionality, providing efficient power switching and control with its 3-Pin (3+Tab) configuration
ZXMP3A13FTA
ZXMP3A13FTA product description: 30V P-Channel UMOS MOSFET
RFD8P05
Power P-Ch MOSFET TO-251AA
CSD18534Q5AT
Single SON 5 mm x 6 mm
RSR020P05HZGTL
With a TSMT-3 package type
NTMFS6H818NT1G
80V NFET TRENCH 8
ZXMP3F30FHTA
N-Channel MOSFET Transistor with 30V Voltage Rating
MUN2211T1
Reliable, robust pre-biased NPN BJT for a wide range of use