GT60N321(Q)
Insulated Gate Bipolar Transistor with a voltage rating of 1000V, current rating of 60A, power rating of 170W, TO3P package, and LH configuration
在庫：9,393
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : GT60N321(Q)
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パッケージ/ケース : TO-3PL
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ブランド : Toshiba Semiconductor and Storage
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コンポーネントの分類 : Single IGBTs
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日付シート : GT60N321(Q) データシート (PDF)
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Series : GT60N321
概要 GT60N321(Q)
This module is specifically tailored for motor control, power supply, and other high power applications where reliable and efficient switching are of utmost importance. Moreover, the GT60N321(Q) is equipped with advanced protection features including short circuit and overcurrent protection, ensuring safe and reliable operation even in the most demanding environments. With its exceptional performance and built-in safety features, this IGBT module is the perfect choice for applications requiring high power and precise control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A | Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170 W | Input Type | Standard |
| Td (on/off) @ 25°C | 330ns/700ns | Reverse Recovery Time (trr) | 2.5 µs |
| Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-3PL | Supplier Device Package | TO-3P(LH) |
| Base Product Number | GT60N321 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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