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HGTG20N60B3

600V V(BR)CES TO-247 N-Channel Insulated Gate Bipolar Transistor rated for 40A Collector Current

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迅速な見積もり

見積もりリクエストを送信してください HGTG20N60B3 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 HGTG20N60B3

As a cherry on top, the HGTG20N60B3 comes fortified with an array of protective mechanisms, including overcurrent and overtemperature safeguards. This fortification transforms it into a go-to choice for intricate power electronics projects that demand unwavering dependability. Through a seamless fusion of technological innovation and practical functionality, this transistor stands tall as a dependable solution crafted to navigate the rigors of high-power settings with unparalleled prowess and poise

主な特長

  • Fast switching and high efficiency
  • High reliability and long lifespan
  • Rugged construction and good thermal design
  • Low noise and minimal electromagnetic interference
  • Excellent thermal conductivity and heat dissipation
  • High isolation voltage and surge withstand capability

応用

  • High-power applications
  • Custom configurations
  • Easy installation

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 40 A
Pd - Power Dissipation 165 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Series HGTG20N60B3
Brand onsemi / Fairchild Continuous Collector Current 40 A
Continuous Collector Current Ic Max 40 A Gate-Emitter Leakage Current +/- 100 nA
Height 4.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 20.82 mm
Part # Aliases HGTG20N60B3_NL Unit Weight 0.225401 oz

保証と返品

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    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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