IXFH50N50P3
Field-Effect Transistor for Power Applications - IXFH50N50P3
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $5.453 | $5.45 |
10 | $4.815 | $48.15 |
30 | $4.436 | $133.08 |
90 | $4.052 | $364.68 |
450 | $3.396 | $1,528.20 |
900 | $3.315 | $2,983.50 |
在庫:8,641
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH50N50P3
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH50N50P3 データシート (PDF)
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Series : IXFH50N50
概要 IXFH50N50P3
Elevate your power management solutions with the IXFH50N50P3 from our PolarP3™ HiPerFET™ product family. Revolutionizing the industry with its advanced technology, this product delivers exceptional performance in the 300V to 600V range. The Figure of Merit (FOM) of our HiPerFETs, a result of optimizing Qg and RDS(on), sets a new standard in power transistor efficiency. Experience a significant decrease in on-state resistance, gate charge, and a remarkable increase in maximum power dissipation. With reduced chip thicknesses and lower thermal resistances, our transistors offer superior power density and thermal management capabilities, ensuring reliable and efficient operation in high-power applications
主な特長
- High power density achieved
- Easy to integrate
- Suitable for high-frequency apps
応用
- Sustainable energy applications
- High-performance inverters
- Reliable battery charging
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.125 |
Continuous Drain Current @ 25 ℃ (A) | 50 | Gate Charge (nC) | 85 |
Input Capacitance, CISS (pF) | 4335 | Thermal resistance [junction-case] (K/W) | 0.13 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 960 | Maximum Reverse Recovery (ns) | 250 |
Replaced By Part Number | IXFH50N60P3 | Sample Request | No |
Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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