IHW30N90R
N-channel IGBT transceiver with 900V voltage rating and 60A current capacity
在庫：6,641
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IHW30N90R
-
パッケージ/ケース : TO-247-3
-
Brand : Infineon Technologies
-
Components Classification : Single IGBTs
-
日付シート : IHW30N90R データシート (PDF)
概要 IHW30N90R
The IHW30N90R IGBT module is a state-of-the-art solution for high voltage power electronic applications. With its impressive voltage rating of 900V and a continuous collector current of 60A, this module is designed to handle high power loads with ease. Its maximum collector current of 120A ensures reliable performance even under heavy loads. The low on-state voltage drop and high switching speed further enhance its suitability for high frequency switching applications, making it an ideal choice for demanding power electronic systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector (Ic) (Max) | 60 A | Current - Collector Pulsed (Icm) | 90 A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A | Power - Max | 454 W |
| Switching Energy | 1.46mJ | Input Type | Standard |
| Gate Charge | 200 nC | Td (on/off) @ 25°C | -/511ns |
| Test Condition | 600V, 30A, 15Ohm, 15V | Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-1 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IHW20N135R5XKSA1
288W 40A 1.35kV TO-247-3 IGBTs ROHS
IHW30N120R2
Green Plastic N-Channel IGBT with 60A Collector Current, 1200V Breakdown Voltage, TO-247AD Package
IHW30N160R5XKSA1
263W 60A 1.6kV FS TO-247-3 IGBTs (Field Stop) - ROHS Compliant
IHW40N60R
IH SeriesRev Conduct IGBT Monolithic Bod Transistors
IHY20N120R3
Insulated Gate Bipolar Transistor with a rated current of 40A and a breakdown voltage of 1200V
SIHG73N60E-GE3
SIHG73N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 73A TO-247AC
SIHB30N60E-GE3
Vishay SIHB30N60E-GE3 N-channel MOSFET Transistor, 29 A, 600 V, 3-Pin D2PAK
SIHG22N60E-GE3
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package
SIHF22N60E-GE3
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP
NGTB40N120IHLWG
Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube
MPQ6502
Transistors - Bipolar Junction
STB25NM60ND
STB25NM60ND: Surface Mount FDmesh II Power MosFet, 600V N-Channel
CM600DXL-24S
High-power IGBT Semiconductor
SI7465DP-T1-E3
SI7465DP-T1-E3 is a power MOSFET device with P-channel enhancement, specified for a voltage range of 60V and a maximum current of 3
IXFN36N100
Power Field-Effect Transistor IXFN36N100 - A high-performance semiconductor device for power management applications
2SD2144S
Switching Element": This product
BMS3004-1E
Suitable for high-power circuit designs requiring efficient switching
SPP20N60C3XKSA1
MOSFET transistor capable of handling 650 volts and 20.7 amps in TO220-3 configuration
MUN2211T1
Reliable, robust pre-biased NPN BJT for a wide range of use
IXYN80N90C3H1
High-power IGBT IXYN80N90C3H1AH