IKW40N65H5
0N65H5 IGBT Transistor 74A 650V 3-Pin TO-247
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.794 | $2.79 |
10 | $2.468 | $24.68 |
30 | $1.846 | $55.38 |
100 | $1.636 | $163.60 |
500 | $1.542 | $771.00 |
1000 | $1.502 | $1,502.00 |
在庫:6,389
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IKW40N65H5
-
パッケージ/ケース : TO-247-3
-
Brand : Infineon Technologies
-
Components Classification : Single IGBTs
-
日付シート : IKW40N65H5 データシート (PDF)
概要 IKW40N65H5
The IKW40N65H5 IGBT stands out for its exceptional di/dt capability, making it a suitable option for applications requiring rapid switching speeds. Its rugged construction and integrated gate protection ensure durability and reliability even in harsh industrial environments. This IGBT is a must-have for engineers and designers looking to maximize performance and efficiency in their applications. Whether you are working on a high-power project that demands reliability or require a transistor that can withstand challenging conditions, the IKW40N65H5 is the ideal choice to meet your needs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | TrenchStop® | Package | Tube |
Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 74 A | Current - Collector Pulsed (Icm) | 120 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A | Power - Max | 255 W |
Switching Energy | 390µJ (on), 120µJ (off) | Input Type | Standard |
Gate Charge | 95 nC | Td (on/off) @ 25°C | 22ns/165ns |
Test Condition | 400V, 20A, 15Ohm, 15V | Reverse Recovery Time (trr) | 62 ns |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-3 | Supplier Device Package | PG-TO247-3 |
Base Product Number | IKW40N65 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IKP20N60TXKSA1](/img/package/to220.jpg)
IKP20N60TXKSA1
Overview of IKP20N60TXKSA1: A member of the IKP20N60T Series, featuring 600V 41A Through Hole IGBT TrenchStop technology in a PG-TO-220-3 housing
![IKW40N120H3FKSA1](/img/package/to247.jpg)
IKW40N120H3FKSA1
High Power Transistors
![IKW75N60H3](/img/package/to247.jpg)
IKW75N60H3
600V IGBT capable of handling currents up to 75A, featuring a low forward voltage of 2.0V, presented in TO247-3 package
![IKQ75N120CH3XKSA1](/img/package/to247.jpg)
IKQ75N120CH3XKSA1
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
![IKQ120N60TXKSA1](/img/package/to247.jpg)
IKQ120N60TXKSA1
Trans IGBT Chip N-Channel 600V 160A 833W TO-247
![IKW50N65F5FKSA1](/img/package/to247.jpg)
IKW50N65F5FKSA1
CH 650V 80A 305W 3-Pin ~24J5000W30420AJHGIBT
![IKW20N60T](/img/package/to247.jpg)
IKW20N60T
Insulated Gate Bipolar Transistor with 650V voltage rating, 20A current rating, and 1.5V threshold voltage in TO247-3 package
![IKW50N65ET7](/img/package/to247.jpg)
IKW50N65ET7
High-performance power semiconductor device
![IKW50N65F5](/img/package/to247.jpg)
IKW50N65F5
Trans IGBT Chip
![IKW40N65F5](/img/package/to247.jpg)
IKW40N65F5
Description: N-channel Insulated Gate Bipolar Transistor (IGBT) chip
![BTA16-800BW3G](/img/package/to220.jpg)
BTA16-800BW3G
3-Pin BTA16-800BW3G
![JANS2N3637](/img/package/to39.jpg)
JANS2N3637
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Tray
![DTC144EETL](/img/package/sot416.jpg)
DTC144EETL
Tape and Reel Packaged NPN Bipolar Junction Transistor Suitable for Digital Circuits with 100mA Current Rating
![NTY100N10](/img/package/to264.jpg)
NTY100N10
TO-3BPL N-CHANNEL POWER MOSFET, 100V, 0.01ohm
![QIS4506001](/img/package/module.jpg)
QIS4506001
4500V N-channel IGBT Transistor with 60A Current Rating and 4-pin Configuration
![IRFPS3810PBF](/img/package/to247.jpg)
IRFPS3810PBF
pin configuration with tab for easy installation and connection
![2N5002](/img/package/to3.jpg)
2N5002
Trans GP BJT NPN 80V 5A 2000mW 3-Pin TO-59 Tray
![IRFD110PBF](/img/package/dip4.jpg)
IRFD110PBF
N-channel Metal Oxide Semiconductor Field-Effect Transistor, 100V, 1A, High Voltage
![CM400HA-28H](/img/package/module.jpg)
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
![IXFT50N60P3](/img/package/to268.jpg)
IXFT50N60P3
N-Channel MOSFET with 600V voltage rating and 50A current rating in TO-268 package