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IMW65R048M1HXKSA1

Power switching device

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概要 IMW65R048M1HXKSA1

With its exceptional low ON-resistance and high breakdown voltage, the IMW65R048M1HXKSA1 GaN FET power transistor sets a new standard for high-performance applications. Its versatility and efficiency make it an ideal solution for various power switching applications, offering reliable and consistent performance in modern electronic systems. The transistor's compact and lightweight design makes it a perfect fit for compact electronic devices, while its built-in gate driver and integrated protection features elevate its reliability and safety, making it a trusted choice for demanding applications

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series CoolSIC™ M1 Package Tube
Product Status Active FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V Vgs(th) (Max) @ Id 5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V Vgs (Max) +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41 Package / Case TO-247-3
Base Product Number IMW65R048

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    部品の品質保証: 365 日

    返品・返金：90日以内

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