IPD25N06S4L30ATMA2

The IPD25N06S4L30ATMA2 is a power MOSFET transistor manufactured by Infineon Technologies. It is designed for high power applications in industrial and automotive systems, providing efficient power management and control. This MOSFET transistor has a drain-source voltage rating of 60V and a continuous drain current of 47A. It features a low RDS(on) resistance of 25mΩ at a gate-source voltage of 10V, allowing for high efficiency and reduced power dissipation. The IPD25N06S4L30ATMA2 is housed in a TO-252 package (DPAK), which provides good thermal performance and reliability in operating temperatures ranging from -55°C to 175°C. This makes it suitable for use in a variety of harsh environment conditions.Additionally, the transistor has a 4.5V gate-source threshold voltage, ensuring compatibility with standard logic levels and making it easy to drive in various circuit configurations. It also has a low gate charge and fast switching characteristics, allowing for high-speed operation in power switching applications.

主な特長

• Smart Grid Solutions
• Energy Efficiency
• Renewable Energy
• Sustainable Development

応用

• LED lighting
• Consumer electronics
• Power supplies