IPG20N06S4L26ATMA1
0a continuous drain current and 60v source voltage
在庫:7,487
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- 365日の品質保証
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部品番号 : IPG20N06S4L26ATMA1
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パッケージ/ケース : TDSON-8
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Brand : INFINEON
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Components Classification : FET, MOSFET Arrays
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日付シート : IPG20N06S4L26ATMA1 データシート (PDF)
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Series : IPG20N06S4L-26
概要 IPG20N06S4L26ATMA1
The IPG20N06S4L26ATMA1 is a high-performance dual N-channel MOSFET transistor designed for automotive applications. With a drain source voltage of 60V and a continuous drain current of 20A, this transistor offers robust power handling capabilities. Its low on-resistance of 0.021ohm and threshold voltage of 1.7V ensure efficient power management and reliable operation. Housed in a TDSON-8 case style with 8 pins, this transistor is easy to integrate into automotive systems. With a maximum operating temperature of 175°C, it can withstand harsh automotive environments. This product is AEC-Q101 qualified, guaranteeing its performance and reliability in automotive use. With a power dissipation of 33W, this transistor is capable of handling high-power applications with ease. Its MSL 1 - Unlimited rating and absence of SVHC (Substances of Very High Concern) make it suitable for a wide range of manufacturing environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDSON-8 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 21 mOhms, 21 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 20 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 33 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | OptiMOS |
Series | OptiMOS-T2 | Brand | Infineon Technologies |
Configuration | Dual | Fall Time | 10 ns, 10 ns |
Height | 1.27 mm | Length | 5.9 mm |
Product Type | MOSFET | Rise Time | 1.5 ns, 1.5 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 18 ns, 18 ns |
Typical Turn-On Delay Time | 5 ns, 5 ns | Width | 5.15 mm |
Part # Aliases | IPG20N06S4L-26 SP000705588 | Unit Weight | 0.003527 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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