IXTK120N25P
120 Amp N-Channel Transistor with 250V Voltage Rating and TO-264AA Housing
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $11.305 | $11.30 |
200 | $4.376 | $875.20 |
500 | $4.223 | $2,111.50 |
1000 | $4.147 | $4,147.00 |
在庫:7,638
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXTK120N25P
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パッケージ/ケース : TO-264-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXTK120N25P データシート (PDF)
概要 IXTK120N25P
When it comes to high-performance applications, the IXTK120N25P is a top contender. This high-power MOSFET transistor boasts a formidable 250V drain-source voltage rating and a continuous drain current of 120A. With a low on-resistance of 0.057 ohms, this N-Channel enhancement mode power MOSFET offers efficient power dissipation and minimal thermal resistance, leading to improved efficiency and reduced power losses. The TO-264 package enhances thermal conduction and power dissipation, while the wide operating temperature range of -55°C to 175°C ensures versatility in various environmental conditions
主な特長
- Low voltage drop across the device
- High surge current capability
- Suitable for DC-AC converters
- Compact and lightweight package design
応用
- Powerful transistor for industrial use
- High efficiency MOSFET for inverters
- Reliable electronic component for UPS systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-264-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 250 V |
Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 185 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 700 W |
Channel Mode | Enhancement | Tradename | PolarHT |
Series | IXTK120N25 | Brand | IXYS |
Configuration | Single | Fall Time | 33 ns |
Forward Transconductance - Min | 50 S | Height | 26.16 mm |
Length | 19.96 mm | Product Type | MOSFET |
Rise Time | 33 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | PolarHT Power MOSFET | Typical Turn-Off Delay Time | 130 ns |
Typical Turn-On Delay Time | 30 ns | Width | 5.13 mm |
Unit Weight | 0.352740 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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