IPZ40N04S53R1ATMA1
High-power switching device for efficient power conversi
在庫:7,960
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPZ40N04S53R1ATMA1
-
パッケージ/ケース : TSDSON-8
-
Brand : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPZ40N04S53R1ATMA1 データシート (PDF)
-
Series : IPZ40N04S5-3R1
概要 IPZ40N04S53R1ATMA1
N-Channel 40 V 40A (Tc) 71W (Tc) Surface Mount PG-TSDSON-8
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS™-5 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V | Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 3.4V @ 30µA | Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2310 pF @ 25 V |
Power Dissipation (Max) | 71W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Supplier Device Package | PG-TSDSON-8 |
Package / Case | TSDSON-8 | Base Product Number | IPZ40N04 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 40 A |
Rds On - Drain-Source Resistance | 3.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.8 V | Qg - Gate Charge | 41 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 71 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Height | 1 mm | Length | 3.3 mm |
Product Type | MOSFET | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 3.3 mm | Part # Aliases | IPZ40N04S5-3R1 SP001152006 |
Unit Weight | 0.001367 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPD25N06S4L-30](/files/uploads/product/s/7993550de14049b4a82e2ce39e835e15.webp)
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
![IPB042N10N3GATMA1](/img/package/d2pak.jpg)
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
![IPB044N15N5ATMA1](/img/package/to263.jpg)
IPB044N15N5ATMA1
Transistor, N-channel MOSFET with 150V voltage and 174A current rating in a 7-pin D2PAK package
![IPC100N04S51R9ATMA1](/img/package/power33.jpg)
IPC100N04S51R9ATMA1
40V N-Channel Transistor for Automotive Use, 100A, 8-Pin TDSON EP Package, Tape and Reel
![IPC100N04S51R2ATMA1](/img/package/son8.jpg)
IPC100N04S51R2ATMA1
Product IPC100N04S51R2ATMA1, labeled as MOSFET_(20V 40V), serves as a high-performance semiconductor device for voltage regulation and control
![IPD053N08N3GATMA1](/img/package/dpak2.jpg)
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
![IPD100N04S402ATMA1](/img/package/dpak2.jpg)
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
![IPB017N10N5ATMA1](/img/package/to263.jpg)
IPB017N10N5ATMA1
Available in Tape and Reel packaging for easy storage and handling
![IPB020N10N5ATMA1](/img/package/d2pak3.jpg)
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
![IPB020N10N5LFATMA1](/img/package/d2pak.jpg)
IPB020N10N5LFATMA1
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant
![IRG4PSH71KD](/img/package/to3.jpg)
IRG4PSH71KD
N-Channel Insulated Gate Bipolar Transistor
![BC818-16](/img/package/sot23.jpg)
BC818-16
NPN Silicon Transistor with Plastic Package-3
![IRLD120PBF](/img/package/dip4.jpg)
IRLD120PBF
Vishay IRLD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP
![CM400HG-66H](/img/package/module.jpg)
CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
![BTA26-600BWRG](/img/package/to-3.jpg)
BTA26-600BWRG
TRIAC 600V 25A(RMS) 260A 3-Pin(3+Tab) TOP Insulated Tube
![IRFR320PBF](/img/package/dpak.jpg)
IRFR320PBF
IRFR320PBF, N-channel MOSFET Transistor, 3.1 A 400 V, 3-Pin D-PAK
![IRF9389PBF](/img/package/soic8.jpg)
IRF9389PBF
MOSFET Trench MOSFET Package
![MAT02EH](/img/package/to8.jpg)
MAT02EH
TO-78 Dual Mono Matched Line Transmitter IC
![ZVN4106F](/img/package/sot23.jpg)
ZVN4106F
Described as a MOSFET discrete semiconductor
![SUP85N10-10-E3](/img/package/to220.jpg)
SUP85N10-10-E3
High-temperature-rated trench N-channel MOSFET with a 100V voltage tolerance