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IRG4PC50UDPBF

High-speed switching for high-efficiency power conversion

在庫：9,770

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概要 IRG4PC50UDPBF

The IGBT's ultrafast switching characteristics and soft recovery diode make it well-suited for high-frequency applications, improving overall system efficiency and reliability. Additionally, the insulated gate bipolar transistor's low on-state voltage drop and fast switching times contribute to reduced power dissipation and improved thermal management

主な特長

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-247AC package
  • Lead-Free
  • Features
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-247AC package

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 55 A
Pd - Power Dissipation 200 W Minimum Operating Temperature - 55 C
Brand Infineon Technologies Height 20.7 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 400 Subcategory IGBTs
Width 5.31 mm Unit Weight 1.340411 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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