IXA70R1200NA
High Gain Bipolar MOS Transistor Integrated in High Voltage IGBT Module
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部品番号 : IXA70R1200NA
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXA70R1200NA データシート (PDF)
概要 IXA70R1200NA
The IXA70R1200NA IGBT module is a powerhouse when it comes to industrial and automotive applications. With its high performance capabilities, compact design, and low stray inductance, this module is a game-changer in the world of power electronics. Its built-in fast-switching diode sets it apart from the competition, ensuring reliable and efficient power conversion every time
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | XPT™ | Package | Tube |
Product Status | Active | IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 100 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | Power - Max | 350 W |
Switching Energy | 4.5mJ (on), 5.5mJ (off) | Input Type | Standard |
Gate Charge | 190 nC | Td (on/off) @ 25°C | 70ns/250ns |
Test Condition | 600V, 50A, 15Ohm, 15V | Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC | Supplier Device Package | SOT-227B |
Base Product Number | IXA70R1200 |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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