IXBH5N160G
Trans IGBT Chip
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $4.969 | $4.97 |
| 10 | $4.754 | $47.54 |
| 30 | $4.624 | $138.72 |
| 90 | $4.514 | $406.26 |
在庫：9,136
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXBH5N160G
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXBH5N160G データシート (PDF)
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Series : IXBH5N160
概要 IXBH5N160G
Thanks to its innovative construction and fabrication processes, the IXBH5N160G BiMOSFET represents a significant leap forward in power semiconductor technology. The integration of MOSFET and IGBT capabilities makes this device a versatile and reliable choice for high voltage applications. The inherent protection provided by the "free" intrinsic body diode ensures safe and efficient operation, even in challenging environments. With its exceptional performance and robust design, the BiMOSFET is poised to become the preferred choice for engineers and designers seeking a high-quality solution for their power management needs
主な特長
- High-efficiency power conversion
- Fast transient response capability
- Overcurrent protection and shutdown
応用
- Research instruments
- Scientific experiments
- Particle accelerators
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | BIMOSFET™ | Package | Tube |
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 1600 V |
| Current - Collector (Ic) (Max) | 5.7 A | Vce(on) (Max) @ Vge, Ic | 7.2V @ 15V, 3A |
| Power - Max | 68 W | Input Type | Standard |
| Gate Charge | 26 nC | Test Condition | 960V, 3A, 47Ohm, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247AD |
| Base Product Number | IXBH5N160 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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