IXBT42N170
Trans IGBT Chip N-CH 1700V 80A 360W 3-Pin(2+Tab) TO-268
在庫:6,123
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IXBT42N170
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パッケージ/ケース : TO-268AA
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ブランド : IXYS
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コンポーネントのカテゴリ : Single IGBTs
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日付シート : IXBT42N170 データシート (PDF)
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Series : IXBT42N170
概要 IXBT42N170
With these advancements, the IXBT42N170 BiMOSFET offers a reliable solution for applications requiring high voltage capabilities. Its unique design and operational characteristics make it an ideal choice for industries such as power electronics, automotive systems, and renewable energy. The combination of enhanced performance and built-in protection features distinguishes BiMOSFETs as a versatile and dependable semiconductor technology
主な特長
- Innovative cooling system design
- High-speed signal processing
- Multifunctional alarm notification
- Simplified calibration process
応用
- Aerospace guidance systems
- Marine navigation equipment
- Satellite communication devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Part Life Cycle Code | Active | Ihs Manufacturer | LITTELFUSE INC |
Package Description | , | Reach Compliance Code | |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | LOW CONDUCTION LOSS | Case Connection | COLLECTOR |
Collector Current-Max (IC) | 80 A | Collector-Emitter Voltage-Max | 1700 V |
Configuration | SINGLE WITH BUILT-IN DIODE | Gate-Emitter Thr Voltage-Max | 5.5 V |
Gate-Emitter Voltage-Max | 20 V | JEDEC-95 Code | TO-268AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 360 W | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 1070 ns | Turn-on Time-Nom (ton) | 224 ns |
VCEsat-Max | 2.8 V |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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