IXFH16N50P
N-MOSFET transistor with Polar™ technology, unipolar, capable of handling 500V and 16A, with a power dissipation of 300W, packaged in TO247-3
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部品番号 : IXFH16N50P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH16N50P データシート (PDF)
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Series : IXFH16N50
概要 IXFH16N50P
Engineers seeking high-performance components for power electronics applications will find the IXFH16N50P Polar™ HiPerFETs to be a valuable asset. These FETs boast a faster body diode and reduced reverse recovery time (trr), making them well-suited for phase-shift bridges, motor control, and uninterruptible power supply systems. With their low RDS(on), low thermal resistance (RthJC), low gate charge (Qg), and enhanced DV/DT capability, these HiPerFETs offer a winning combination of features that ensure superior performance and reliability in demanding applications
主な特長
- Miniaturized Design
- Surge Immunity
- Rapid Response Time
- High Efficiency Operation
応用
- Efficient energy conversion
- Advanced power management
- Optimizing power usage
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 8A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH16 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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