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IXBX55N300

IGBT Transistors Disc

数量 単価(USD) 合計金額
1 $254.861 $254.86
210 $101.691 $21,355.11
510 $98.293 $50,129.43
990 $96.614 $95,647.86

在庫：7,642

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
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迅速な見積もり

見積もりリクエストを送信してください IXBX55N300 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXBX55N300

The IXBX55N300 BiMOSFET represents a significant advancement in semiconductor technology, effectively marrying the superior characteristics of MOSFETs and IGBTs. Through the use of non-epitaxial construction and state-of-the-art fabrication methods, these high voltage devices offer unmatched performance and reliability. Specifically designed for parallel operation, the BiMOSFET boasts a positive voltage temperature coefficient in both saturation voltage and forward voltage drop of its intrinsic diode. Furthermore, the inclusion of a "free" intrinsic body diode serves as a protective barrier, redirecting inductive load current during device turn-off to prevent potential damage from voltage transients

主な特長

  • Powerful Intel processor for demanding tasks
  • Simplified configuration and setup process
  • Advanced thermal management for quiet operation

応用

    Automation, monitoring, control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series BIMOSFET™ Package Tube
Product Status Not For New Designs Voltage - Collector Emitter Breakdown (Max) 3000 V
Current - Collector (Ic) (Max) 130 A Current - Collector Pulsed (Icm) 600 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 55A Power - Max 625 W
Input Type Standard Gate Charge 335 nC
Reverse Recovery Time (trr) 1.9 µs Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Package / Case TO-247-3 Variant
Supplier Device Package PLUS247™-3 Base Product Number IXBX55

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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