IXDR30N120
IXDR Series 1200 Vce 50 A 100 ns t(on) High Voltage IGBT - ISOPLUS 247
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部品番号 : IXDR30N120
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パッケージ/ケース : ISOPLUS247™
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXDR30N120 データシート (PDF)
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Series : IXDR30N120
概要 IXDR30N120
The IXDR30N120 is a high-performance IGBT transistor designed for applications requiring a DC collector current of 50A and a collector-emitter saturation voltage of 2.4V. With a power dissipation of 200W and a collector-emitter voltage rating of 1.2Kv, this device is suitable for a wide range of industrial and commercial uses. It comes in an Isoplus-247 package with 3 pins for easy installation and connection. The IXDR30N120 is RoHS compliant, ensuring that it meets the latest environmental standards. This product from IXYS Semiconductor offers reliable performance and durability, making it a top choice for engineers and designers looking for high-quality components for their projects
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | IXYS | Product Category | IGBT Transistors |
| RoHS | Details | Technology | Si |
| Package / Case | ISOPLUS247-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.4 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 50 A | Pd - Power Dissipation | 200 W |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | IXDR30N120 | Brand | IXYS |
| Continuous Collector Current | 50 A | Continuous Collector Current Ic Max | 60 A |
| Gate-Emitter Leakage Current | 500 nA | Height | 21.34 mm |
| Length | 16.13 mm | Operating Temperature Range | - 55 C to + 150 C |
| Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
| Subcategory | IGBTs | Tradename | ISOPLUS |
| Width | 5.21 mm | Unit Weight | 0.186952 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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