IXFB210N30P3
Industrial-grade N-channel transistor
在庫:5,538
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IXFB210N30P3
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パッケージ/ケース : TO-264-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFB210N30P3 データシート (PDF)
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Series : IXFB210N30
概要 IXFB210N30P3
Unleash the power of innovation with the extraordinary PolarP3™ HiPerFET™ product family. Representing the pinnacle of high-performance semiconductor technology, these FETs are designed to exceed expectations and push boundaries. By fine-tuning the Figure of Merit (FOM) through a precise combination of Qg and RDS(on), these devices offer unparalleled benefits compared to conventional super junction technologies. Enjoy a remarkable 12 percent reduction in on-state resistance, a 14 percent decrease in gate charge, and an impressive 20 percent increase in maximum power dissipation. Additionally, the reduced chip thicknesses leading to lower thermal resistances contribute to an overall increase in power density, making these FETs a standout choice for applications that demand optimal performance and efficiency. Step into the future of power electronics with the PolarP3™ HiPerFET™ product family
主な特長
- High reliability
- Low noise emission
- Rapid switching times
- Pulse width modulation
応用
- Flexible motor controllers
- Energy-efficient inverters
- Industrial servo drives
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 300 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0145 |
Continuous Drain Current @ 25 ℃ (A) | 210 | Gate Charge (nC) | 268 |
Input Capacitance, CISS (pF) | 16200 | Thermal resistance [junction-case] (K/W) | 0.066 |
Configuration | Single | Package Type | TO-264 PLUS |
Power Dissipation (W) | 1890 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No | Check Stock | Yes |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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