IXFH10N100P
MOSFET with a 10 amp current rating and 1000V voltage capability
在庫：9,112
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部品番号 : IXFH10N100P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH10N100P データシート (PDF)
概要 IXFH10N100P
The IXFH10N100P Polar™ HiPerFETs are a game-changer in the world of power semiconductor devices. With their unique combination of the Polar Standard product family's strengths and a faster body diode, these FETs are specifically designed for demanding applications such as phase-shift bridges in motor control and uninterruptible power supply systems. By reducing the reverse recovery time (trr) of the body diode, these HiPerFETs offer improved efficiency and performance, making them ideal for high-power applications where speed and reliability are critical
主な特長
- Long-Term Reliability
- Fast Response Time
- Low Power Consumption
- High Isolation Voltage
- Achieving High Efficiency
応用
- Smart switch-mode design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 5A, 10V | Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 25 V | Power Dissipation (Max) | 380W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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