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IXFH120N20P

20A N-channel power MOSFET designed for high efficiency applications

在庫：5,451

  • 90日間のアフター保証
  • 365日の品質保証
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見積もりリクエストを送信してください IXFH120N20P このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXFH120N20P

The IXFH120N20P 'Polar™ HiPerFETs offer a new level of performance for power electronics applications. With their fast body diode and reduced reverse recovery time, these FETs are well-suited for demanding applications such as phase-shift bridges and UPS systems. The low RDS(on) and low RthJC characteristics of these FETs ensure efficient power delivery and minimal thermal resistance, while the enhanced DV/DT capability allows for reliable operation in high-speed switching applications

主な特長

  • Robust Construction
  • Mechanical Shock Resistance
  • Elevated Performance
  • Superior EMI Filter
  • High-Quality Materials
  • and Reliability

応用

  • Optimal Energy Efficiency
  • Advanced Power Management
  • Innovative Circuit Design

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 200 V
Drain Current-Max (Abs) (ID) 120 A Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.022 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 265 pF JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 714 W Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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