IXFH12N100
TO-247AD N-Channel Power MOSFETs with Fast Intrinsic Diodes in Standard Series, RoHS, 60V - 1200V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $29.509 | $29.51 |
210 | $11.774 | $2,472.54 |
510 | $11.382 | $5,804.82 |
990 | $11.187 | $11,075.13 |
在庫:9,110
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH12N100
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH12N100 データシート (PDF)
概要 IXFH12N100
Featuring a rugged through-hole mounting design, the IXFH12N100 MOSFET offers ease of installation and reliability in demanding operating conditions. The Rds(on) test voltage of 10V further enhances its efficiency and performance, making it suitable for a wide range of industrial and commercial applications. Whether used in motor control systems, power supplies, or other high-power circuits, this MOSFET delivers consistent and reliable performance. Trust the IXFH12N100 MOSFET to provide the power management solutions you need for your next project
主な特長
- Precision Timing
- High Speed Capable
- Low Power Consumption
応用
- Reliable performance
- Efficient power usage
- Cost-effective solution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
Base Product Number | IXFH12 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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