IXFH13N80
13A Power MOSFET, 800V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor, TO-247 Package, 3 Pins
在庫：8,072
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- 365日の品質保証
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部品番号 : IXFH13N80
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH13N80 データシート (PDF)
概要 IXFH13N80
The HiPerFET™ Standard series, exemplified by product IXFH13N80, is known for its high quality and reliability in demanding applications. This series stands out for its low gate charge and excellent ruggedness, making it a preferred choice for both hard switching and resonant mode scenarios. The fast intrinsic diode further enhances its performance, ensuring efficient operation in industrial settings
主な特長
- Ruggedized for Harsh Environments
- Thermal Stable Operation
- Absorbed Glass Facade
- Electromagnetic Interference
応用
- Cost-effective solution
- Robust construction
- Wide operating temperature range
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™ | Package | Tube |
| Product Status | Last Time Buy | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH13 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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