IXFH15N100
15 Amps 1000V MOSFET with 0.7 Rds
在庫:6,026
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部品番号 : IXFH15N100
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH15N100 データシート (PDF)
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Series : IXFH15N100
概要 IXFH15N100
With its low gate charge and excellent ruggedness, the IXFH15N100 N-Channel HiPerFET™ Standard series Power MOSFET is a versatile option for both hard switching and resonant mode applications. The fast intrinsic diode further enhances its performance, making it the go-to choice for industrial applications. Available in isolated types and other standard industrial packages, this series is designed to meet the demands of various industrial needs
主な特長
- Rapid Thermal Recovery Capability
- Fast Current Response Time
- Low Forward Voltage Drop
- High Surge Current Capability
応用
- Durable and dependable
- Cutting-edge technology
- Optimal performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™ | Package | Tube |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V | Power Dissipation (Max) | 360W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
Base Product Number | IXFH15 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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