IXFH15N100Q
IXFH15N100Q MOSFET
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部品番号 : IXFH15N100Q
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH15N100Q データシート (PDF)
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Series : HIPERFET™
概要 IXFH15N100Q
Featuring advanced technology and high performance, the IXFH15N100Q Power MOSFET is a popular choice among engineers and designers looking for a reliable solution for their power needs. The Q-Class series is known for its exceptional characteristics, including a low gate charge and excellent ruggedness, making it ideal for demanding applications. With a fast intrinsic diode, this MOSFET offers superior efficiency and reliability, ensuring consistent performance in a wide range of industrial settings
主な特長
- Low power consumption
- Silicon gate oxide thickness control
- Durable and reliable performance
- Elastomer-based encapsulation material
応用
- Easy integration
- Quick installation
- Optimal functionality
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V | Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH15 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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