IXFH170N15X3

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

主な特長

• Lowest on-resistance R
• DS(ON)
• and gate charge Q
• g
• Fast soft recovery body diode
• dv/dt ruggedness
• Superior avalanche capability
• International standard packages

応用

• Battery chargers for light electric vehicles
• Synchronous rectification in switching
• power supplies
• Motor control
• DC-DC converters
• Uninterruptible power supplies
• Electric forklifts
• Class-D audio amplifiers
• Telecom systems