IXFH20N100P
N-MOSFET transistor with Polar™ technology
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $9.345 | $9.34 |
200 | $3.616 | $723.20 |
500 | $3.490 | $1,745.00 |
1000 | $3.427 | $3,427.00 |
在庫:8,048
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH20N100P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH20N100P データシート (PDF)
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Series : IXFH20N100
概要 IXFH20N100P
Unleash the power of innovation with the IXFH20N100P Polar™ HiPerFETs, engineered to meet the demands of phase-shift bridges motor control and uninterruptible power supply applications. The enhanced body diode with reduced reverse recovery time (trr) ensures smooth and rapid operation, making these semiconductor devices the ideal choice for high-speed applications. Featuring low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, these HiPerFETs deliver exceptional efficiency and performance, setting a new standard in power semiconductor technology
主な特長
- Modular Design Architecture
- Hot-Swap Capability
- Snap-In/Out Modules
- Tool-Less Installation
応用
- Fast charging capabilities
- Stable power transmission
- Precise motor control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Package Description | TO-247, 3 PIN |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | LITTELFUSE | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 800 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1000 V |
Drain Current-Max (Abs) (ID) | 20 A | Drain Current-Max (ID) | 20 A |
Drain-source On Resistance-Max | 0.57 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247AD | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 660 W | Pulsed Drain Current-Max (IDM) | 50 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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