IXFH22N60P
22 amp MOSFET for 600 volts
在庫：5,761
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部品番号 : IXFH22N60P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH22N60P データシート (PDF)
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Series : IXFH22N60
概要 IXFH22N60P
With their superior technical specifications, the Polar™ HiPerFETs in the IXFH22N60P model offer significant advantages for designers and engineers. The low RDS(on) ensures minimal power losses, while the low RthJC facilitates efficient heat dissipation. Additionally, the low Qg and enhanced DV/DT capability contribute to improved overall performance in demanding operating conditions, making these HiPerFETs a top choice for critical applications
主な特長
- Robust and Reliable Performance
- High Isolation Voltage Rating
- Low Leakage Current
- Wide Operating Temperature Range
応用
- Integrated power supply solution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 11A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH22 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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