IXFH26N60P
N-Channel MOSFET with 26A and 600V ratings in TO-247AD package
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部品番号 : IXFH26N60P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH26N60P データシート (PDF)
概要 IXFH26N60P
In summary, the Polar™ HiPerFETs (IXFH26N60P) represent a compelling option for engineers seeking high-performance power transistors. With their advanced features and versatile applications, these FETs are poised to drive innovation and excellence in a wide range of industries. Trust the IXFH26N60P to deliver unparalleled performance and reliability in your next power electronics project
主な特長
- Pulse-Width Modulation
- Low Gate Charge
- High Power Handling Ability
- Economical
- Affordable
応用
- Efficient power supply designs
- Reliable DC-DC conversion
- AC motor drive solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | LITTELFUSE | Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 1200 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
| Drain Current-Max (ID) | 26 A | Drain-source On Resistance-Max | 0.27 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 65 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | IXYS | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-247-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 26 A |
| Rds On - Drain-Source Resistance | 270 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 72 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 460 W | Channel Mode | Enhancement |
| Tradename | HiPerFET | Series | IXFH26N60 |
| Brand | IXYS | Fall Time | 21 ns |
| Forward Transconductance - Min | 26 S | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | MOSFET |
| Rise Time | 27 ns | Factory Pack Quantity | 30 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 75 ns | Typical Turn-On Delay Time | 25 ns |
| Width | 5.3 mm | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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