IXFH52N30P
The IXFH52N30P device is a N-channel MOSFET transistor rated for 300V and 52A, enclosed in a TO-247 package
在庫:6,054
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部品番号 : IXFH52N30P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH52N30P データシート (PDF)
概要 IXFH52N30P
The IXFH52N30P is a versatile product from the Polar™ HiPerFETs series that caters to the specific needs of phase-shift bridges in motor control and UPS applications. With a faster body diode that lowers reverse recovery time (trr), these FETs are optimized for high-performance systems requiring exceptional efficiency and reliability. Boasting low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, these HiPerFETs offer engineers a comprehensive solution for achieving advanced power management objectives
主な特長
- Robust Construction
- Safe Operating Conditions
- Easy Fault Detection
- Redundant Interlocks
応用
- Microcontroller-Based Inverter
- Fast Charging Technology
- Adaptive Power Management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 66mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3490 pF @ 25 V | Power Dissipation (Max) | 400W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
Base Product Number | IXFH52 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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