IXFH94N30P3
MOSFET N-Channel: Power MOSFET featuring Fast Diode
在庫:9,110
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFH94N30P3
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXFH94N30P3 データシート (PDF)
-
Series : IXFH94N30
概要 IXFH94N30P3
Unveil the exceptional IXFH94N30P3 from our renowned PolarP3™ HiPerFET™ product family, offering unmatched performance in the 300V to 600V range. With an exceptional Figure of Merit (FOM) resulting from the multiplication of Qg and RDS(on), this semiconductor device surpasses traditional super junction technologies. Enjoy remarkable enhancements with the IXFH94N30P3, including up to a 12 percent reduction in on-state resistance (Rdson), a 14 percent decrease in gate charge (Qg), and an impressive 20 percent increase in maximum power dissipation (Pd). By implementing advanced chip design optimizations, we have achieved lower thermal resistances and improved power density, setting new benchmarks for efficiency and performance in electronic components. Elevate your projects with the exceptional capabilities of the IXFH94N30P3
主な特長
- Compact and reliable
- Low noise operation
- Wide operating range
応用
- Powerful DC converters
- Renewable energy integration
- Industrial automation solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 300 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.036 |
Continuous Drain Current @ 25 ℃ (A) | 94 | Gate Charge (nC) | 102 |
Input Capacitance, CISS (pF) | 5510 | Thermal resistance [junction-case] (K/W) | 0.12 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 1040 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![ZVN4106F](/img/package/sot23.jpg)
ZVN4106F
Described as a MOSFET discrete semiconductor
![ACS302-5T3](/img/package/soic20.jpg)
ACS302-5T3
20-pin small outline (SO) tube package for easy installation
![IRF6674TRPBF](/img/package/son5.jpg)
IRF6674TRPBF
Infineon MOSFET RL IRF6674TRPBF
![UF2840P](/img/product.png)
UF2840P
Ultra-fast switching transistor for high-frequency application
![BC80740MTF](/img/package/sot233.jpg)
BC80740MTF
PNP Bipolar Transistor BC80740MTF with -800 mA and -50 V ratings
![IRF7210PBF](/img/package/soic8.jpg)
IRF7210PBF
This product has a low on-resistance of 7mOhms and a high gate charge of 212nC
![TJ15S06M3L(T6L1,NQ](/img/package/dpak.jpg)
TJ15S06M3L(T6L1,NQ
P-Channel Silicon MOSFET with a 60V rating
![CM800HB-66H](/img/package/module.jpg)
CM800HB-66H
IGBT Modules IGBT MODULE HIGH VOLTAGE SINGLE
![ATF-54143-TR1G](/img/package/sot343.jpg)
ATF-54143-TR1G
BROADCOM LIMITED - ATF-54143-TR1G - MOSFET, RF, HEMT, SOT-343
![NTTFS4C05NTAG](/img/package/dfn8.jpg)
NTTFS4C05NTAG
High-speed switching, low voltage drop N-channel MOSFET for reliable power contro