IXFK140N20P
ROHS-certified IXFK140N20P MOSFETs enclosed in TO-264AA packaging
在庫：6,581
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFK140N20P
-
パッケージ/ケース : TO-264-3
-
ブランド : IXYS
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IXFK140N20P データシート (PDF)
-
Series : IXFK140N20
概要 IXFK140N20P
Say goodbye to high RDS(on) values and welcome the low RthJC and low Qg capabilities of the Polar™ HiPerFETs. These FETs are designed to handle high-voltage and high-current applications with ease, providing enhanced DV/DT capability for optimal performance. With the IXFK140N20P, you can trust that your power electronics will run smoothly and efficiently
主な特長
- Improved ESD Performance
- Surface Mount Package
- Fast Switching Speed
応用
- Energy-saving power solutions
- Robust DC-DC converters
- Fast battery charging
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 70A, 10V | Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | Power Dissipation (Max) | 830W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) | Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFK140 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
SIR826ADP-T1-GE3
Designed for high-power electronic devices and equipment
CM600DXL-24S
High-power IGBT Semiconductor
SSTA56T116
PNP SOT-23 Driver Transistor -80V -0.5A
STF11NM60N
The STF11NM60N is a 3-pin (3+Tab) N-channel MOSFET designed for applications requiring high voltage (up to 600V) and moderate current (10A)
RTR030P02HZGTL
MOSFET for Automotive Applications: -20V Pch Small Signal, 3A
IXTK210P10T
Trench power MOSFETs for efficient performance
SIA453EDJ-T1-GE3
Robust power management solution for automotive and industrial use cases
IXGH50N60B
This IGBT chip offers reliable performance and is suitable for a variety of industrial and automotive applications
IPD65R250C6
Infineon IPD65R250C6 is a high-performance N-channel MOSFET transistor boasting a current rating of 16 A and a voltage tolerance of 700 V
RD3P130SPTL1
Pch Power MOSFET with a voltage rating of -100V and current rating of -13A