IXFK360N10T
IXFK360N10T is a high-performance N-channel Power MOSFET
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部品番号 : IXFK360N10T
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パッケージ/ケース : TO-264-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFK360N10T データシート (PDF)
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Series : IXFK360N10
概要 IXFK360N10T
The IXFK360N10T is a powerhouse when it comes to low voltage/high current applications. With an incredibly low RDS(on), this Trench Gate Power MOSFET ensures minimal power dissipation, making it an ideal choice for energy-efficient solutions. Its wide operating junction temperature range from -40 °C to 175 °C further enhances its versatility, making it a top contender for demanding applications in harsh environments, such as automotive systems
主な特長
- Outstanding Power Handling
- Rapid Switching Speed
- Fewer Components Required
応用
- Flexible power supply options
- Efficient power conversion
- Compact and lightweight design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Trench | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 360A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 525 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 33000 pF @ 25 V | Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) | Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFK360 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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