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IXFN400N15X3

IXFN400N15X3: SOT-227B MOSFETs ROHS compliant

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  • 90日間のアフター保証
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迅速な見積もり

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概要 IXFN400N15X3

The IXFN400N15X3 MOSFET represents a significant advancement in power conversion technology, utilizing a charge compensation principle and proprietary process technology to achieve best-in-class performance. With an unmatched Figure of Merit, this MOSFET offers the lowest on-resistance times gate charge, resulting in minimal conduction and switching losses. Its low reverse recovery charge and time allow for efficient energy dissipation during high-speed switching, contributing to overall system reliability. Moreover, the device's avalanche capability and superior dv/dt performance ensure protection against voltage spikes and accidental turn-on of parasitic bipolar transistors, reducing the need for additional snubbers in power converter designs. As a rugged and versatile solution, the IXFN400N15X3 is well-suited for a wide range of power conversion applications, delivering exceptional performance and efficiency

主な特長

  • Ultra-low noise amplifier
  • Rapid recovery body diode
  • Superior radiation hardness

応用

  • Smart grid power optimization solutions
  • Ultra-fast charging solutions
  • Adaptive motor speed control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series HiPerFET™, Ultra X3 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 400A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 200A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 365 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23700 pF @ 25 V Power Dissipation (Max) 695W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN400

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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