IXFR120N20
ISOPLUS247, 3 PIN
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $20.219 | $20.22 |
200 | $7.825 | $1,565.00 |
500 | $7.550 | $3,775.00 |
1000 | $7.413 | $7,413.00 |
在庫:8,311
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFR120N20
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXFR120N20 データシート (PDF)
概要 IXFR120N20
Described as a part of the renowned HiPerFET™ Standard series, the IXFR120N20 product boasts a range of features that cater to the demands of modern industrial applications. Along with low gate charge and excellent ruggedness, this Power MOSFET also incorporates a fast intrinsic diode, offering users a reliable and efficient solution for both hard switching and resonant mode operations. With the option of isolated types and various standard industrial packages, customers can easily integrate this MOSFET into their systems while enjoying the benefits of its advanced technology
主な特長
- High Immunity to Radiation
- Limited In-Rush Current
- Low Capacitance
- Power Factor Correction
応用
- Flexible applications
- Modern technology
- Energy-saving benefits
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™ | Package | Tube |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 105A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 17mOhm @ 60A, 10V | Vgs(th) (Max) @ Id | 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V | Power Dissipation (Max) | 417W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS247™ | Package / Case | TO-247-3 |
Base Product Number | IXFR120 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![MUN5233DW1T1G](/img/package/sc70.jpg)
MUN5233DW1T1G
Dual NPN Bipolar Transistors - Pre-Biased 100mA 50V BRT
![FMMT593TA](/files/uploads/product/s/3d735d47-0eb0-429d-48e8-08dbc6589f20.webp)
FMMT593TA
With a maximum current rating of 500 milliamps, this transistor is suitable for a wide range of applications
![IRFB7440PBF](/img/package/to220.jpg)
IRFB7440PBF
IRFB7440PBF is a N-channel MOSFET with a voltage rating of 40V and a current rating of 120A, featuring a low on-resistance of 2.5mΩ at 10V
![IRLI2910PBF](/files/uploads/product/s/da0e8617-238b-4974-0720-08dbb33edd15.webp)
IRLI2910PBF
Power Field-Effect Transistor, 31A I(D), 100V, 0.03ohm
![BSS315PH6327XTSA1](/img/package/sot23.jpg)
BSS315PH6327XTSA1
INFINEON BSS315PH6327XTSA1 - a reliable and efficient power MOSFET
![IXTK170P10P](/img/package/to264.jpg)
IXTK170P10P
-170A -100V 890W Transistor TO264
![SIHG47N60E-E3](/img/package/to247.jpg)
SIHG47N60E-E3
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC Tube
![APT12040JVR](/img/package/sot.jpg)
APT12040JVR
Featuring a voltage rating of 1
![MMBT5087LT1](/img/package/sc74.jpg)
MMBT5087LT1
Transistor PNP bipolar
![FDS5682](/img/package/soic8.jpg)
FDS5682
The FDS5682 is a surface-mount N-channel MOSFET designed for switching applications