IXGK60N60B2D1
IXGK60N60B2D1: Insulated Gate Bipolar Transistor with 75A IC and 600V VCES, N-Channel, TO-264AA Package, 3-Pin Configuration
在庫:6,705
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- 365日の品質保証
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部品番号 : IXGK60N60B2D1
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パッケージ/ケース : TO-264-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXGK60N60B2D1 データシート (PDF)
概要 IXGK60N60B2D1
IGBT PT 600 V 75 A 500 W Through Hole TO-264 (IXGK)
主な特長
- Square RBSOA
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFAST™ | Package | Tube |
Product Status | Obsolete | IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 75 A |
Current - Collector Pulsed (Icm) | 300 A | Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
Power - Max | 500 W | Switching Energy | 1mJ (off) |
Input Type | Standard | Gate Charge | 170 nC |
Td (on/off) @ 25°C | 28ns/160ns | Test Condition | 400V, 50A, 3.3Ohm, 15V |
Reverse Recovery Time (trr) | 35 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | TO-264 (IXGK) | Base Product Number | IXGK60 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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