IXGR50N60BD1
00V Voltage Rating
在庫:6,674
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXGR50N60BD1
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXGR50N60BD1 データシート (PDF)
概要 IXGR50N60BD1
The IXGR50N60BD1 isn't just a component – it's a game-changer in the world of power electronics. With its superior power handling capabilities and efficient performance, this transistor sets a new standard for industrial applications. Say goodbye to power inefficiencies and hello to optimized power conversion systems that deliver results. Trust in the IXGR50N60BD1 to keep your operations running smoothly, no matter the conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFAST™ | Package | Tube |
Product Status | Obsolete | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 75 A | Current - Collector Pulsed (Icm) | 200 A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A | Power - Max | 250 W |
Switching Energy | 3mJ (off) | Input Type | Standard |
Gate Charge | 110 nC | Td (on/off) @ 25°C | 50ns/110ns |
Test Condition | 480V, 50A, 2.7Ohm, 15V | Reverse Recovery Time (trr) | 35 ns |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-3 | Supplier Device Package | ISOPLUS247™ |
Base Product Number | IXGR50 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
BSP613PH6327XTSA1
P-MOSFET transistor with unipolar operation, -60V voltage rating, -2.9A current rating, and 1.8W power dissipation in PG-SOT223 package
IRFP460BPBF
Vishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC
CM1000E3U-34NF
High Voltage IGBT Module rated at 1.7kV and 1kA
IXBX50N360HV
IGBTs 660W 125A 3.6kV TO-247P ROHS
IXTX90P20P
P-Channel 200 V 90 A 44 mOhm Through Hole PolarP Power Mosfet -PLUS247
IRF6215STRLPBF
MOSFET transistor designed for P-Channel operation
BTA20-700CW
Triacs with Snubberless technology, capable of handling 20 A
ZXTN2031FTA
The ZXTN2031FTA is a single-element NPN silicon transistor capable of handling currents up to 5A and voltages up to 50V
UJ3C065080T3S
650V rated SiC transistor featuring N-JFET and N-MOSFET design, unipolar operation, cascode configuration, capable of handling 23A current
APT66M60B2
600V Silicon N-channel MOSFET rated for 70A current, featuring a 3-pin (3+Tab) T-MAX Tube package