IXKR47N60C5
IXKR47N60C5 is a high-performance single N-channel MOSFET, designed to provide efficient power management in various circuits
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $19.879 | $19.88 |
200 | $7.694 | $1,538.80 |
500 | $7.424 | $3,712.00 |
1000 | $7.290 | $7,290.00 |
在庫:4,443
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXKR47N60C5
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXKR47N60C5 データシート (PDF)
-
Series : IXKR47N60
概要 IXKR47N60C5
IXKR47N60C5 represents a significant advancement in power semiconductor technology, offering engineers a cutting-edge solution for high-power applications. The integration of Super Junction technology results in superior efficiency and performance, making it the top choice for demanding industrial and automotive applications. The MOSFET's low RDS(on) value translates to reduced power losses and improved overall system efficiency. Furthermore, the internal DCB isolation simplifies the assembly process, saving time and resources during production
主な特長
- Fast Switching Performance
- High Current Handling Capability
- Ruggedized for Harsh Environments
- Long-Term Reliability Guarantee
応用
- Compact size
- Enhanced durability
- Cost-effective solution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | Avalanche Energy Rating (Eas) | 1950 mJ |
Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (Abs) (ID) | 47 A |
Drain Current-Max (ID) | 47 A | Drain-source On Resistance-Max | 0.045 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSIP-T3 |
JESD-609 Code | e1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | IN-LINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Reference Standard | UL RECOGNIZED |
Surface Mount | NO | Terminal Finish | TIN SILVER COPPER |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![DTC043ZMT2L](/img/package/mt200.jpg)
DTC043ZMT2L
Product Description: Trans Digital BJT NPN 100mA 3-Pin VMT T/R
![SBC856BLT1G](/img/package/sot23.jpg)
SBC856BLT1G
Digital Signal Transistor"
![2SC4116-Y](/img/package/sot323.jpg)
2SC4116-Y
NPN Bipolar Junction Transistor for automotive applications
![NP100P04PLG-E1-AY](/img/package/to263.jpg)
NP100P04PLG-E1-AY
NP100P04PLG-E1-AY
![IPC50N04S55R8ATMA1](/img/package/son8.jpg)
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
![TIPP116](/img/package/to92.jpg)
TIPP116
Darlington Transistors
![BC846BMTF](/img/package/sot233.jpg)
BC846BMTF
NPN silicon transistor with epitaxial structure
![SI7994DP-T1-GE3](/img/package/power33.jpg)
SI7994DP-T1-GE3
N-channel MOSFET transistor designed for switching applications with a maximum voltage of 30V and current rating of 20A
![IRGP4050](/img/package/to247.jpg)
IRGP4050
Trans IGBT Chip
![2SK2225-E](/img/package/to3pf.jpg)
2SK2225-E
2SK2225-E MOSFET: High-Power Transistor with 2A Current and 1500V Voltage Rating, Lead-Free TO-3PFM Package