IXSN62N60U1
90A Trans IGBT Module - N-Channel, 600V, 250,000mW Power Dissipation
在庫:5,522
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部品番号 : IXSN62N60U1
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : IGBT Modules
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日付シート : IXSN62N60U1 データシート (PDF)
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Series : IXSN62N60
概要 IXSN62N60U1
For applications requiring high current and high voltage handling capabilities, the IXSN62N60U1 power MOSFET from IXYS Corporation is the ideal choice. This MOSFET is specially designed for efficient power management in a variety of industrial and commercial systems such as power supplies, motor controls, inverters, and lighting systems. With a drain-source voltage rating of 600V and a continuous drain current rating of 62A, the IXSN62N60U1 is well-suited for high-power applications. Its low on-resistance of 0.09 ohms helps to reduce power losses and improve overall system efficiency, while its fast switching speed and low gate charge contribute to enhanced performance and reliability in dynamic applications. Housed in a TO-268 package, the IXSN62N60U1 offers thermal efficiency and easy mounting on a PCB, making it a convenient choice for system integration. Furthermore, its wide operating temperature range of -55°C to 150°C ensures reliable operation in harsh environmental conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
IGBT Type | PT | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 90 A |
Power - Max | 250 W | Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
Current - Collector Cutoff (Max) | 750 µA | Input Capacitance (Cies) @ Vce | 4.5 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC | Supplier Device Package | SOT-227B |
Base Product Number | IXSN62 |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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