IXTH10N100D2
TO-247 MOSFETs meeting ROHS standards
在庫：7,523
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部品番号 : IXTH10N100D2
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH10N100D2 データシート (PDF)
概要 IXTH10N100D2
The IXTH10N100D2 MOSFET is a depletion-mode device that remains in a "normally-on" state, requiring no turn-on voltage at the gate terminal. It is designed to handle blocking voltages of up to 1700V and offers low drain-to-source resistances, making it a reliable choice for systems that operate continuously, such as emergency or burglar alarms. Its simplified control and reduced power dissipation can significantly improve the efficiency of such applications
主な特長
- ‘High-speed switching’
- Low in-rush current
- Safe operating area’
応用
- Voltage references
- Switching regulators
- Temperature sensors
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | Depletion | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 5A, 10V | Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 5 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 25 V |
| FET Feature | Depletion Mode | Power Dissipation (Max) | 695W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
| Base Product Number | IXTH10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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