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IXTH110N25T

Through Hole technology for reliable TO-247-3 package mounting

在庫：6,041

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

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概要 IXTH110N25T

For low voltage and high current applications, look no further than the IXTH110N25T Trench Gate Power MOSFETs. These MOSFETs stand out for their remarkably low RDS(on) value, ensuring minimal power dissipation and optimal energy efficiency. Their robust design makes them a perfect fit for demanding environments, such as automobile applications, where reliability is non-negotiable. With a wide operating junction temperature range from -40 °C to 175 °C, these MOSFETs are built to withstand extreme conditions while delivering exceptional performance. Engineers in search of a reliable and versatile solution for their power management needs will find the IXTH110N25T MOSFETs to be a top choice, offering unparalleled efficiency and durability for even the most challenging applications

主な特長

  • Advanced Gate Driver Technology
  • Fault Tolerant Operation
  • Safe Operating Parameters
  • Easy Installation Process

応用

  • Efficient Power Conversion
  • Smart Battery Charging
  • Precise Motor Control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
JESD-609 Code e3 Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN Time@Peak Reflow Temperature-Max (s) 10

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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