IXTH20N60
This product is a MOSFET rated for 20 Amperes and 600 Volts, featuring a low on-state resistance of 0.35 ohms
在庫：7,101
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXTH20N60
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXTH20N60 データシート (PDF)
-
Series : IXTH20N60
概要 IXTH20N60
Engineered for high performance and reliability, the IXTH20N60 MOSFET boasts a voltage rating of 600V and a continuous current capability of 20A. Its low on-resistance of 0.35 ohms ensures efficient power delivery with minimal loss. With a threshold voltage of 4.5V and a package style of TO-247 (SOT-249), it offers convenience and versatility for various applications. Additionally, its RoHS compliance underscores its commitment to environmental sustainability, making it a responsible choice for environmentally conscious projects
主な特長
- High-speed switching performance
- Rugged construction
- Low RDS(on) characteristic
応用
- Seamless integration
- Optimal performance
- Sophisticated design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | MegaMOS™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 10A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
| Base Product Number | IXTH20 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
IPW65R045C7FKSA1
Specs: N-Channel MOSFET, 650V, 46A, TO247-3 Package, CoolMOS C7
SI7386DP-T1-E3
Low on-resistance of 7mΩ at 10V for efficient operation
Q6008L5
TRIAC Standard 600 V 8 A Through Hole TO-220 Isolated Tab
STD10PF06T4
TO-252 package P-Channel power MosFet from STD10PF06 Series
DMG1016UDW-7
Small Signal Field-Effect Transistor
IXTT16N20D2
The IXTT16N20D2 MOSFET falls under the category of N-channel depletion mode devices
NTTFS5C670NLTAG
Channel Power MOSFET with 60V Voltage Rating and 16A Current Rating
MTD6N15T4G
Maximum power dissipation of 1.25W at ambient temperature
BC848CLT1G
BC848CLT1G is a small signal bipolar transistor with a current rating of 0.1A and a breakdown voltage of 30V
IRGIB10B60KD1P
Silicon semiconductor device for power switching