IXTH40N50L2
Description: N-Channel Power MOSFET with a voltage rating of 500 V, current rating of 40 A, and power dissipation of 540 W
在庫：4,598
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部品番号 : IXTH40N50L2
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH40N50L2 データシート (PDF)
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Series : IXTH40N50
概要 IXTH40N50L2
With a focus on meeting the needs of applications requiring Power MOSFETs to operate in their current saturation regions, the IXTH40N50L2 product offers low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). These unique features are essential for ensuring the reliability and performance of Power MOSFETs in applications where they are subjected to high thermal and electrical stresses. By extending the FBSOAs and suppressing electro-thermal instability, our LinearL2™ Power MOSFETs provide a dependable solution for linear-mode operation, allowing for larger "operating windows" and enhanced durability
主な特長
- High-performance and high-reliability
- No electrostatic discharge
- No electromagnetic interference
- Suitable for automotive applications
応用
- Temperature controllers
- Phase shifters
- LED dimmers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
| Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 2000 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500 V | Drain Current-Max (Abs) (ID) | 40 A |
| Drain Current-Max (ID) | 40 A | Drain-source On Resistance-Max | 0.17 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 540 W | Pulsed Drain Current-Max (IDM) | 80 A |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON | Manufacturer | IXYS |
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 40 A | Rds On - Drain-Source Resistance | 170 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Qg - Gate Charge | 320 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 540 W |
| Channel Mode | Enhancement | Tradename | Linear L2 |
| Series | IXTH40N50 | Brand | IXYS |
| Fall Time | 44 ns | Forward Transconductance - Min | 11 S |
| Height | 21.46 mm | Length | 16.26 mm |
| Product Type | MOSFET | Rise Time | 133 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | Linear L2 Power MOSFET |
| Typical Turn-Off Delay Time | 127 ns | Typical Turn-On Delay Time | 50 ns |
| Width | 5.3 mm | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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