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IXTH60N20L2

The TO-247 package configuration of IXTH60N20L2 facilitates easy integration into electronic circuits

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概要 IXTH60N20L2

When it comes to applications requiring Power MOSFETs to operate in their current saturation regions, the IXTH60N20L2 stands out as a top-choice solution. These state-of-the-art devices are engineered to deliver exceptional performance under high thermal and electrical stresses, making them ideal for linear-mode operation. With low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA), the IXTH60N20L2 Power MOSFETs ensure outstanding reliability and efficiency in even the most demanding environments. By suppressing electro-thermal instability, these innovative devices provide larger operating windows, allowing for increased flexibility and performance optimization. Engineers can rest assured knowing that the IXTH60N20L2 is designed to withstand extreme conditions and deliver consistent results, making it a preferred choice for critical applications across various industries

主な特長

  • Compliant to ISO/IEC 17025
  • Euro pallet compatible
  • Safety and performance assured
  • Certified RoHS compliant

応用

  • Robust overcurrent protection
  • Efficient power delivery
  • Programmable current limiting

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.045 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 255 pF JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 540 W Pulsed Drain Current-Max (IDM) 150 A
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application AMPLIFIER
Transistor Element Material SILICON

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    部品の品質保証: 365 日

    返品・返金：90日以内

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