IXTH6N150
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247
在庫:9,153
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部品番号 : IXTH6N150
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH6N150 データシート (PDF)
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Series : IXTH6N150
概要 IXTH6N150
The IXTH6N150 is part of the High Voltage series of N-Channel Standard MOSFETs, designed to meet the needs of power switching systems across various applications. With its high-voltage capabilities, this MOSFET is ideal for use in high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Its versatility makes it a valuable component for engineers and designers seeking reliable and efficient power management solutions
主な特長
- Pulse withstand capability
- Surge energy handling
- Low input capacitance
- Avalanche rated operation
応用
- Advanced technology integration
- Seamless functionality
- Optimal power distribution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | IXYS | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 6 A |
Rds On - Drain-Source Resistance | 3.5 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 67 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 540 W | Channel Mode | Enhancement |
Series | IXTH6N150 | Brand | IXYS |
Configuration | Single | Fall Time | 38 ns |
Forward Transconductance - Min | 6.5 mS | Product | Power MOSFETs |
Product Type | MOSFET | Rise Time | 20 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Type | High Voltage Power MOSFET | Typical Turn-Off Delay Time | 50 ns |
Typical Turn-On Delay Time | 22 ns | Unit Weight | 0.211644 oz |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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