IXTL2N470
N-Channel MOSFET: Designed for Very High Voltage Applications
在庫:6,349
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部品番号 : IXTL2N470
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パッケージ/ケース : ISOPLUSi5-PAK™
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXTL2N470 データシート (PDF)
概要 IXTL2N470
Dare to dream big with the IXTL2N470, a formidable player in the Very High Voltage series of N-Channel Standard MOSFETs. Built to withstand blocking voltages of up to 4.5kV, this MOSFET is a game-changer for power conversion applications that require lightning-fast switching capabilities. Its on-state resistance features a positive temperature coefficient, making it the perfect candidate for parallel device operation and offering a more cost-effective alternative to lower-voltage MOSFETs. By choosing the IXTL2N470, designers can simplify their designs, optimize their circuitry, and achieve significant space savings on their PCB boards, all while ensuring the utmost reliability and performance of their systems
主な特長
- Ruggedized package
- Excellent thermal performance
- Compliance with IEC/EN 60950 standard
- Silicon-controlled rectifier (SCR) compatible
応用
- Advanced technology
- Multiple applications
- Efficient performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 4700 V | Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 20Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 6V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 25 V |
Power Dissipation (Max) | 220W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Supplier Device Package | ISOPLUSi5-Pak™ |
Package / Case | ISOPLUSi5-PAK™ | Base Product Number | IXTL2 |
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部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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