IXTX32P60P
32 Amps MOSFET with 600V and 0.350 Rds
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部品番号 : IXTX32P60P
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTX32P60P データシート (PDF)
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Series : IXTX32P60
概要 IXTX32P60P
Introducing the IXTX32P60P MOSFETS, engineered with innovative Polar™ technology for unparalleled performance. These MOSFETS deliver a remarkable 30% decrease in on-state resistance (RDSon) and a 40% lower gate charge (Qg) than conventional models, leading to superior conduction loss reduction and optimized switching capabilities. With dynamic dv/dt and avalanche ratings, these MOSFETS are built to excel in demanding environments. Furthermore, their positive temperature coefficient enables seamless paralleling, offering enhanced flexibility and efficiency
主な特長
- Low power consumption achieved
- High efficiency delivered
- Durable for harsh environments
応用
- Resonant power supplies
- Solar inverters
- Uninterruptible power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | -600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.35 |
| Continuous Drain Current @ 25 ℃ (A) | -32 | Gate Charge (nC) | 196 |
| Input Capacitance, CISS (pF) | 11100 | Thermal resistance [junction-case] (K/W) | 0.14 |
| Configuration | Single | Package Type | TO-247 PLUS |
| Typical Reverse Recovery Time (ns) | 480 | Power Dissipation (W) | 890 |
| Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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