IXXX160N65B4
High-power 650V/310A IGBT Transistors
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部品番号 : IXXX160N65B4
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パッケージ/ケース : TO-247-3Variant
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXXX160N65B4 データシート (PDF)
概要 IXXX160N65B4
The 650V breakdown voltage of the IXXX160N65B4 makes it perfect for snubber-less hard-switching applications, providing designers with flexibility and efficiency in their projects. Furthermore, the positive collector-to-emitter voltage temperature coefficient allows for multiple devices to be used in parallel, meeting the high current requirements of various applications. With low gate charges that minimize gate drive requirements and switching losses, our IGBTs deliver superior performance and reliability in any scenario
主な特長
- This power transistor is designed for reliable operation in harsh conditions.
- Suitable for applications requiring high efficiency and low EMI emissions.
応用
- Top-notch EV drives
- Energy-efficient inverters
- Reliable power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | GenX4™, XPT™ | Package | Tube |
| Product Status | Active | IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | Current - Collector (Ic) (Max) | 310 A |
| Current - Collector Pulsed (Icm) | 860 A | Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 160A |
| Power - Max | 940 W | Switching Energy | 3.3mJ (on), 1.88mJ (off) |
| Input Type | Standard | Gate Charge | 425 nC |
| Td (on/off) @ 25°C | 52ns/220ns | Test Condition | 400V, 80A, 1Ohm, 15V |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant | Supplier Device Package | PLUS247™-3 |
| Base Product Number | IXXX160 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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