IXYL60N450
Power semiconductor
在庫:5,598
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXYL60N450
-
パッケージ/ケース : ISOPLUSi5-PAK™
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXYL60N450 データシート (PDF)
概要 IXYL60N450
Look no further than the IXYL60N450, a standout IGBT offering from IXYS Corporation, for your high power needs. Designed to deliver exceptional performance in high current and voltage environments, this powerhouse component is a game-changer for electric vehicles, renewable energy systems, and industrial motor drives. Boasting a voltage rating of up to 450V and a continuous current rating of 60A, the IXYL60N450 is built to handle the toughest tasks with ease. Its low on-state voltage of just 1.9V at 60A ensures minimal power loss and maximum efficiency, making it a standout choice for efficiency-focused applications. With the ability to switch frequencies of up to 20 kHz, this IGBT offers fast and efficient operation, allowing for seamless integration into various systems. Additionally, the IXYL60N450 comes equipped with essential protection features such as a built-in temperature sensor and overcurrent and overvoltage circuits, ensuring safe and reliable performance at all times. Lightweight and compact in design, this IGBT is a versatile solution for high power applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | XPT™ | Package | Tube |
Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 4500 V |
Current - Collector (Ic) (Max) | 90 A | Current - Collector Pulsed (Icm) | 680 A |
Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 60A | Power - Max | 417 W |
Input Type | Standard | Gate Charge | 366 nC |
Td (on/off) @ 25°C | 55ns/450ns | Test Condition | 960V, 60A, 4.7Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | ISOPLUSi5-PAK™ | Supplier Device Package | ISOPLUSi5-Pak™ |
Base Product Number | IXYL60 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![SI1303DL-T1-E3](/img/package/sc70.jpg)
SI1303DL-T1-E3
Three-pin Si transistor ideal for small signal applications
![IXFH150N17T](/img/package/to247.jpg)
IXFH150N17T
Silicon-based Power Field-Effect Transistor capable of handling 150A I(D) current and 175V
![TPV8100B](/img/product.png)
TPV8100B
TPV8100B - RF Bipolar Transistors: Amplify Your Signals with Precision
![MJ11014](/img/package/to3.jpg)
MJ11014
Bipolar NPN Darlington Transistor, 90V, 30A, 200W, Through Hole TO-3
![SQ2361EES-T1-GE3](/img/package/sot236.jpg)
SQ2361EES-T1-GE3
MOSFET for Automotive Applications: P-Channel, 60V (D-S), 175°C
![MMBFJ175LT1G](/img/package/sot23.jpg)
MMBFJ175LT1G
The purpose of this P-channel JFET device is for analog switching and chopper applications
![VS-70MT060WSP](/img/package/module.jpg)
VS-70MT060WSP
Power Semiconductor Device with IGBT Technology
![CM50DY-12H](/img/package/module.jpg)
CM50DY-12H
Module with 50A N-Channel Transistor and 600V
![2N5781](/img/package/to3.jpg)
2N5781
Trans GP BJT PNP 65V 3.5A 3-Pin TO-5
![BC640TA](/img/package/to92.jpg)
BC640TA
Frequency Response: 100MHz